金年会·(中国)_金年会

中
Mailbox verification
Your email:
Verification Code:
SGM820PB8B3TFM
820A, 750V IGBT MODULE

      SGM820PB8B3TFM is a six-cell topology module based on Silan self-developed high-density trench process IGBT chip technology. This module is suitable for hybrid and pure electric vehicle applications, it features high current density, high short-circuit capability and high blocking voltage level, it provides more reliable guarantee for inverter operation under harsh environmental conditions.

Main feature

  • Based on fine trench FS-V technology, blocking voltage up to 750V

  • Low VCE(sat) with positive temperature coefficient

  • Low switching loss

  • Low Qg and Cres

  • Using DBC with excellent thermal conductivity

  • Built-in NTC for each phase

  • Direct water-cooled substrate, low thermal resistance


Ordering Information
Product Name Package form Marking Hazardous Substance Control Packing Type Remarks
SGM820PB8B3TFM B3 SGM820PB8B3TFM Carton
Block Diagram

1440&720.png

Documents
title Types of Size (KB) date Download the latest English version
SGM820PB8B3TFM 0 1970-01-01 SGM820PB8B3TFM Brief Datasheet
Packages
友情链接: